The Process Of Crystalline Silicon
Silicon is the second most superabundant element in the Earth's crust aside from oxygen. Silicon used in solar cell construction is refined to a nearly 100% purity. In the photovoltaic process solar cells are utilized to turn light into electrical power. Solar cells are composed of semiconductor materials just like: silicon, gallium, cadmium telluride and copper indium diselenide. One of the most common elements in solar cells is crystalline silicon.
With regards to crystalline silicon solar cells, considerably pure silicon with high crystal quality is required to make sturdy usable solar cells. In the outer shell of a silicon atom it comprises of 4 bonding electrons. To be able to form a stable electron configuration, in the crystal lattice two electrons of neighboring atoms from an electron pair bond. By forming a steady bond with 4 neighboring electrons silicon reaches its noble gas arrangement with 8 out electrons. This electron bond can be split up by light or heat, which enables the electron to move openly and as a result it leaves a hole in the crystal lattice. This is known as intrinsic conductivity on crystalline silicon.
Intrinsic conductivity cannot be utilized to generate electrical energy. The crystalline silicon could only create electricity when impurities (often known as doping atoms) are introduced into the crystal lattice. These atoms have one electron more (phosphorous) or one electron less (boron) than crystalline silicon in their outer shell. The phosphorous doping technique is referred to as negative doping (n-doping) and the boron doping process is known as positive doping (p-doping).
When it comes to n-doping the electron can move about liberally in the crystal and as a result it can transport electrical charge. Conversely p-doping has a missing bonding electron for every bonding born atom in the crystal lattice. This enables electrons from crystalline silicon atoms to fill the hole caused by the missing bonding electron, making a new hole somewhere else. The conduction method depending on these doping atoms is referred to as impurity conduction.
If both together the p and n-doped semiconductor layers are brought together a p-n junction is made. This junction lets surplus electrons from the n-semiconductor to diffuse into the p-semiconductor layer, thus creating an area known as the space charge region. Positively charged doping atoms remain in the n-region of the transition and negatively charged doping atoms stays in the p-region of the transition area. An electrical field is then generated that is in contrast to the movement of the charge carriers, with the end result that diffusion does not continue indefinitely via the crystalline silicon. This p-n semiconductor is what is known as a solar cell. Once the solar cell is exposed to light photons are absorbed by the electrons. This contribution of energy breaks electron bonds.
The distributed electrons are pulled through the electrical field into the n-region. The openings that are formed migrate in the opposing direction, into the p-region. This process is what is termed the photovoltaic effect - converting light into electricity through crystalline silicon.
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